High-Breakdown P-Channel GaN MOS-HFETs with Al2O3-Dielectric and Drain Field-Plate

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/c...

Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

SUMMARY Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si sub-strates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO 2 profile formation was developed. An HFET with a graded FP structure ...

Modelling the Threshold Voltage for p-channel E-mode GaN HFETs

P-channel GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) utilising a polarization induced two Dimensional Hole Gas (2DHG) operate inherently in depletion mode (D-mode). The condition for their conversion to E-mode operation is examined via analytical expressions for the threshold voltage and verified via TCAD simulations. Between the two heterostructures (i) c...

C-Doped Semi-Insulating GaN HFETs on Sapphire Substrates with a High Breakdown Voltage and Low Specific On-Resistance

AlGaN/GaN heterojunction field effect transistors (HFETs) on C-doped semi-insulating GaN buffers on sapphire substrates with high breakdown voltage (BV) and low specific on-resistance (ARon) were fabricated. A BV of ~ 1600 V and an ARon of ~ 4 mW-cm2 was achieved from the fabricated devices without any field plate design. This result is a record achievement for AlGaN/GaN HFETs on sapphire subst...

InAlN-barrier HFETs with GaN and InGaN channels